Robust semiconductor device

ABSTRACT

A method for producing a semiconductor component structure in a semiconductor body. In one embodiment, the method includes producing two differently doped semiconductor zones of the same conduction type, and carrying out a first implantation, implanting dopant atoms of a first conduction type into the semiconductor body via one of the sides over the whole area. A mask is produced on the one side, partly leaving free the one side. A second implantation is carried out, implanting dopant atoms of the first conduction type into the region left free by the mask proceeding from the one of the sides.

CROSS-REFERENCE TO RELATED APPLICATIONS

This Utility Patent Application is a divisional application of U.S.application Ser. No. 12/241,910, filed Sep. 30, 2008, which isincorporated herein by reference.

BACKGROUND

Bipolar power semiconductor components such as power IGBTs or powerdiodes, for example, have a—usually lightly doped—base zone that forms apn junction with a further semiconductor zone. The component is turnedoff if the pn junction is reverse-biased by the application of a reversevoltage. In this case, there forms in the base zone a space charge zonewhich, proceeding from the pn junction, extends into the base zone allthe further, the higher the reverse voltage present and the lower thedoping of the base zone.

Such power semiconductor components are intended to have a high dynamicrobustness, that is to say are intended to be able to turn off even highcurrents rapidly and reliably. They are intended to have a high staticdielectric strength. The are intended also to be able to carry anavalanche current after an avalanche breakdown has occurred, withoutbeing destroyed in the process.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings are included to provide a furtherunderstanding of embodiments and are incorporated in and constitute apart of this specification. The drawings illustrate embodiments andtogether with the description serve to explain principles ofembodiments. Other embodiments and many of the intended advantages ofembodiments will be readily appreciated as they become better understoodby reference to the following detailed description. The elements of thedrawings are not necessarily to scale relative to each other. Likereference numerals designate corresponding similar parts.

FIG. 1 illustrates one embodiment of a power IGBT including asemiconductor body having an inner zone and an edge zone, on the basisof a cross section through the semiconductor body.

FIG. 2 illustrates one embodiment of a power IGBT having trenchtransistor cells.

FIG. 3 illustrates one embodiment of an edge termination in the regionof the edge zone.

FIG. 4 illustrates one embodiment of an edge termination in the regionof the edge zone.

FIG. 5 illustrates one embodiment of a method for producing a field stopzone having two differently doped field stop zone sections of a powerIGBT on the basis of cross sections through a semiconductor duringdifferent method processes.

FIG. 6 illustrates one embodiment of a power diode on the basis of across section through a semiconductor body.

FIG. 7 illustrates one embodiment of a method for producing an emitterzone and a field stop zone of a power diode on the basis of crosssections through a semiconductor body during different method processes.

DETAILED DESCRIPTION

In the following Detailed Description, reference is made to theaccompanying drawings, which form a part hereof, and in which is shownby way of illustration specific embodiments in which the invention maybe practiced. In this regard, directional terminology, such as “top,”“bottom,” “front,” “back,” “leading,” “trailing,” etc., is used withreference to the orientation of the Figure(s) being described. Becausecomponents of embodiments can be positioned in a number of differentorientations, the directional terminology is used for purposes ofillustration and is in no way limiting. It is to be understood thatother embodiments may be utilized and structural or logical changes maybe made without departing from the scope of the present invention. Thefollowing detailed description, therefore, is not to be taken in alimiting sense, and the scope of the present invention is defined by theappended claims.

It is to be understood that the features of the various exemplaryembodiments described herein may be combined with each other, unlessspecifically noted otherwise.

FIG. 1 illustrates one embodiment of a power IGBT on the basis of avertical cross-sectional illustration. This power IGBT includes asemiconductor body 100 having a first side 101, which is referred tohereinafter as front side, and a second side 102, which is referred tohereinafter as rear side. The front and rear sides 101, 102 delimit thesemiconductor body 100 in a vertical direction. In a lateral direction,the semiconductor body is delimited by an edge 103 which, in the exampleillustrated, runs perpendicular to the front and rear sides 101, 102,but which can also run in bevelled fashion relative to the front side101 and/or the rear side 102 (not illustrated).

The semiconductor body 100 has an edge zone 112 which adjoins the edge103 in a lateral direction of the semiconductor body 100 and which isadjacent to the inner zone 111 of the semiconductor body 100 in alateral direction at a sides opposite the edge 103. In a plane runningperpendicular to the sectional plane illustrated in FIG. 1, the edgezone 112 surrounds the inner zone 111 completely. The semiconductor body100 can have the geometry of a circular disk, and the edge 103 and theedge zone 112 then have an annular geometry. Furthermore, thesemiconductor body 100 can also have any other disk-shaped geometry, forexample a rectangular-disk-shaped geometry.

The IGBT has a base zone 25 of a first conduction type, the base zoneextending in a lateral direction of the semiconductor body over theinner zone 111 and the edge zone 112. The base zone 25 is an n-dopedsemiconductor zone if the IGBT is an n-channel IGBT and a p-dopedsemiconductor zone if the IGBT is a p-channel IGBT. A dopingconcentration of the base zone 25 lies for example within the range ofbetween 10¹²cm⁻³ and 10 ¹⁵ cm³, and can lie in particular between 10 ¹³cm⁻³ and 10 ¹⁴ cm⁻³. The doping of the base zone 25 results for examplefrom a basic doping which the semiconductor body 100 has before furthersemiconductor zones—which will be explained below—of the IGBT areproduced.

In the inner zone 111, the IGBT has a transistor cell array having aplurality of transistor cells constructed such that they are of the sametype in each case. Each of the transistor cells has a source zone 26 ofthe first conduction type, the source zone also being referred to asemitter zone, and a body zone 27 of a second conduction type, which iscomplementary to the first conduction type, the body zone being arrangedbetween the source zone 26 and the base zone 25. A gate electrode 31 ispresent for controlling a conducting channel in the body zone 27 betweenthe source zone 26 and the base zone 25, the gate electrode beingdielectrically insulated from the semiconductor body 100 by a gatedielectric 32 and being arranged adjacent to the body zone 27. The gateelectrode 31 is common to all the transistor cells and is realized as aplanar gate electrode arranged above the front side 101 of thesemiconductor body in the example illustrated. Contact is made with thesource zones 26 of the individual transistor cells by a first connectionelectrode 41, which short-circuits the source zones 26 and the bodyzones 27 in the example illustrated and which forms a source connectionor a first emitter connection E of the power IGBT.

It should be pointed out the provision of transistor cells having aplanar gate electrode should be understood merely as an example, andthat transistor cells having any other geometry of the gate electrodecan, of course, be provided, such as e.g., trench transistor cells. FIG.2 illustrates an example of such trench transistor cells on the basis ofa cross section through the semiconductor body 100. In these trenchtransistor cells, the gate electrode 31 is arranged in trenchesextending in a vertical direction of the semiconductor body 100proceeding from the front side 101 through the source zone 26 and thebody zone 27 right into the base zone 25, and is dielectricallyinsulated from the semiconductor body 100 by the gate dielectric 32.

Referring to FIG. 1, the transistor cell array ends, in a lateraldirection of the semiconductor body 100, in the transition regionbetween the inner zone 111 and the edge zone 112, and thus at a distancefrom the edge 103. In the example illustrated, the transistor cells arearranged in the region of the front side 101 of the semiconductor body100 in the inner zone 111. The semiconductor component has an edgetermination 50, which is arranged in the edge zone 112 and which is onlyillustrated schematically in FIG. 1. The edge termination can be anyedge termination suitable for power semiconductor components.

Referring to FIG. 3, the edge termination 50 can include field rings 51,for example, which enclose the inner zone 111 and the transistor cellarray in ring-shaped fashion in a lateral direction of the semiconductorbody 100. The field rings 51 are doped semiconductor zones of thecomplementary conduction type with respect to the doping type of thebase zone 25 and are arranged at a distance from one another in adirection of the edge 103, arranged in the region of the front side 101.Above the field rings 51, a passivation layer 53, such as an oxidelayer, for example, can be applied to the front side 101 of thesemiconductor body. Optionally, the edge termination 50 furthermore hasfield plates 54 which each make contact with one of the field rings 51and which are arranged on or in the passivation layer 53. In the case ofthe edge termination illustrated in FIG. 3, such a field plate 54 isconnected to each of the field rings 51. It goes without saying thatthere is also the possibility of providing such field plates only inassociation with individual field rings from among the field rings.

Optionally, the edge termination 50 additionally includes a channelstopper arranged in a lateral direction between the edge 103 and thefield ring 51 lying closest to the edge 103. The channel stopper is asemiconductor zone of the same conduction type as the base zone 25, butis doped more highly. In accordance with the field rings 51, the channelstopper 52 completely surrounds the transistor cell array in a lateraldirection of the semiconductor body.

A further embodiment of an edge termination 50 is illustrated in FIG. 4.This edge termination has a VLD zone (VLD—Variation of Lateral Doping),in the region of the front side 101. This is a semiconductor zone of thesecond conduction type, the doping concentration of which decreases in adirection of the edge 103 and/or the dimensions of which become smallerin a vertical direction with decreasing distance from the edge 103. ThisVLD zone completely surrounds the transistor cell array in a lateraldirection of the semiconductor body 100. Optionally, above the VLD zonea passivation layer 53 is applied to the front side 101 of thesemiconductor body. In accordance with the edge termination with fieldrings as explained with reference to FIG. 4, a channel stopper 52 isoptionally present between the VLD zone 55 and the edge 103.

It should be pointed out that the edge terminations in accordance withFIGS. 3 and 4 are illustrated only to provide a better understanding,and that any further edge terminations suitable for power semiconductorcomponents can, of course, be used in the power IGBT, such as e.g., JTEedge terminations (JTE=Junction Termination Extension) or in oneembodiment bevelled edges.

Referring to FIG. 1, the IGBT has a second emitter zone 22, which isarranged at least in the inner zone 111 and which is adjacent to thesecond side 102 in the example illustrated. This further emitter zone,which is also referred to a drain zone or collector zone, is p-doped inthe case of an n-channel IGBT and forms the p-type emitter of thecomponent. Contact is made with this second emitter zone by a secondconnection electrode 42 or second emitter electrode, which is applied tothe rear side 102 of the semiconductor body 100. In the case of ann-channel IGBT, the second emitter electrode is also referred to ascollector K.

A field stop zone is present in the base zone 25 adjacent to the secondemitter zone 22, the field stop zone having two differently doped fieldstop zone sections: a first field stop zone section 23 in the inner zone111 and a second field stop zone section 24 in the edge zone 112. In theexample illustrated, the first field stop zone section 23 is directlyadjacent to the second emitter zone 22, but can also be arranged at adistance from the second emitter zone 22. In this case, however, thefield stop zone is realized such that it lies significantly closer tothe second emitter zone 22 than to the body zones 27 of the transistorcell array. In this case, the distance between the field stop zone 23,24 and the body zones 27 is for example 5 to 10 times as large as thedistance between the field stop zone 23, 24 and the second emitter zone22.

The first field stop zone section 23 is more lightly doped than thesecond field stop zone section 24 or has a lower dopant dose than thesecond field stop zone section 24 in a vertical direction. In this case,the dopant dose (unit: cm⁻²) corresponds to the spatial integral of thedoping concentration (unit: cm⁻³) in a vertical direction of thesemiconductor body 100. The field stop zone 23, 24 can be effected byimplantation of dopant atoms into a section of the semiconductor body100 that already has a basic doping. In this case, the basic dopingcorresponds for example to the later doping of the base zone 25. Thedopant dose of the field stop zone is then composed of the dopant dosealready present and the implantation dose additionally introduced.

The dopant dose D₂₄ of the second field stop zone section 24 is forexample between 1·10¹² cm⁻² and 5·10¹³ cm⁻² or between 1·10 ¹² cm⁻² and10 ¹³ cm⁻²and in particular between 2·10¹² cm⁻² and 10 ¹³ cm⁻². A ratiobetween the higher dopant dose D₂₄ of the second field stop zone section24 and the lower dopant dose D₂₃ of the first field stop zone section 23is for example between 1.5 and 5 (D₂₄/D₂₃=1.5 . . . 5). The dopant doseof the first field stop zone section 23 is for example 0.3 times to 5times the breakdown charge of the semiconductor material of the fieldstop zone or of the semiconductor body, such as e.g., silicon.

The dopant dose of the second emitter zone 22 in the region of the innerzone 111 is for example a few 10¹¹ cm⁻² to 10¹⁵ cm⁻².

The doping concentrations of the second emitter zone 22 and of the firstand second field stop zone sections 23, 24 are dependent on thedimensions of these semiconductor zones in a vertical direction. An edgeconcentration of the second emitter 22 is for example between 10¹⁶ cm⁻³and 10¹⁸cm⁻³. In the transition region with respect to the field stopzone 23, 24, an intersection point concentration is for example between10¹⁴cm⁻³ and 10¹⁶ cm⁻³.

The doping profiles in the base zone 25 and the first field stop zonesection 23 and the second emitter zone 22 are illustrated schematicallyin the right-hand part of FIG. 1. The doping profiles in the base zone25 and the more highly doped second field stop zone section 24 areillustrated schematically in the left-hand part of FIG. 1.

In the embodiment illustrated in FIG. 1, the second emitter zone 22ends, in a lateral direction of the semiconductor body, in thetransition region between the inner zone 111 and the edge zone 112, thatis to say actually before the edge 103, and is thus essentially limitedto the inner zone 111. As is illustrated in FIG. 1, the second emitterzone 22 can end in a lateral direction still within the inner zone 111,that is to say within the transistor cells. In this case, the inner zoneis defined by the region of the semiconductor body 100 in which activetransistor cells of the transistor cell array are present. A transistorcell such as is arranged at the edge of the cell array in FIG. 1 andwhich does not have a source zone is not such an active transistor cell.

The functioning of the power IGBT illustrated with reference to FIG. 1is explained below. For explanation purposes it shall be assumed thatthe IGBT is an n-channel IGBT, that is to say that the base zone 25, thesource zone 26 and the field stop zone 23, 24 are n-doped semiconductorzones, and that the body zone 27 and the second zone 22 are p-dopedsemiconductor zones. The explanation below is correspondingly alsoapplicable to an IGBT having complementarily doped semiconductor zones,in which case the signs or polarities of the potentials and voltagesmentioned below should be interchanged.

The IGBT is turned on if a positive voltage is present between collectorK and emitter E and if a drive potential suitable for forming aconducting channel in the body zone 27 between the source zone 26 andthe base zone 25 is present at the gate electrode 31. When the IGBT isdriven in the on state, electrons are emitted from the source zone 26via the channel in the body zone 27 and holes are emitted from thesecond emitter zone 22 into the base zone 25. The component is turnedoff if a positive voltage is present between collector K and emitter Ebut a drive potential suitable for forming a conducting channel in thebody zone 27 is not present at the gate electrode 31. In this case, aspace charge zone propagates proceeding from the pn junction between thebody zone 27 and the base zone 25 in a vertical direction in the basezone 25. In this case, the static dielectric strength of the componentis crucially determined by the dimensions of the base zone 25 in avertical direction and the doping concentration thereof.

If the IGBT is turned off after a load current has previously flowedthen at the beginning of the locking or turn-off operation the base zone25 is still flooded with holes which, during a turn-off, can reduce thedielectric strength of the component relative to the static dielectricstrength. In order to have the effect that the edge zone 112, when thepower IGBT is turned on, is flooded to a lesser extent with free chargecarriers, in one embodiment holes, like the inner zone 111, the emitterefficiency of the second emitter 22 is reduced in the region of the edgezone 112. Referring to FIG. 1, this can be achieved by the secondemitter 22 being emitted in the region of the edge zone 112. As analternative, there is the possibility of indeed providing the secondemitter 22 in the region of the edge zone 112, but doping the secondemitter more lightly in this region than in the region of the inner zone111. FIG. 1 illustrates using a dashed line such a more lightly dopedregion of the second emitter zone 22, which is designed by 22 ₁. Thereduced flooding of the edge zone 112 with charge carriers when thecomponent is turned on has the effect that during a turn-off of a loadcurrent flowing through that IGBT, the dynamic dielectric strength ofthe component is higher in the edge zone 112 than in the inner zone 111.If an avalanche breakdown occurs, then this occurs firstly in the innerzone 111, which has a larger area than the edge zone 112, and not in theedge zone 112 having a smaller area.

If an avalanche breakdown occurs in the component explained, thenfurther charge carriers—in the example explained, in addition to p-typecharge carriers or holes also n-type charge carriers or electrons—aregenerated in the base zone 25 by impact ionization and flow in adirection of the rear side 102. During an avalanche breakdown it isnecessary to prevent a space charge zone associated with the flowingavalanche current from punching through as far as the rear side 102 ofthe semiconductor body 100. In the region of the inner zone 111, such apunch-through of the space charge zone is made more difficult by thesecond emitter zone 22 from which holes are emitted into the base zone25 as soon as the space charge zone punches through as far as theemitter zone 22. These holes at least partly compensate for the electroncurrent generated by impact ionization in the base zone 25. By contrast,in the region of the edge zone 112, in which no second emitter zone 22or a more weakly doped second emitter zone 22 ₁ is present, such apunch-through of the electric field to the rear side 102 is made moredifficult or prevented by the more highly doped second field stop zonesection 24, such that it is not possible that just low avalanchecurrents for the space charge zone to punch through as far as the rearside 102 and thus to a rear-side metallization layer, which would meandamage or destruction of the power IGBT. The component explained thushas both a high dynamic robustness and—in the event of an avalanchebreakdown—a high avalanche current strength.

A possible method for producing the field stop zone having the twodifferently doped field stop zone sections 23, 24 and a second emitterzone 22 that is cut out in the region of the edge zone 112 is explainedbelow with reference to 5 a to 5 c. These figures illustrate crosssections through the semiconductor body 100 during different methodprocesses of the production method.

During first method processes, which are illustrated in FIG. 5 a, dopantatoms of the first conduction type are implanted into the semiconductorbody 100 via one of the sides, the rear side 102 in the example. Thesedoped dopant atoms form completely—or at least partly—the later morehighly doped second field stop zone section 24. In FIG. 5 a, 24′designates a region of the semiconductor body 100 into which the dopantatoms are implanted. The vertical dimensions of this region 24′ aredependent on the implantation conditions, in one embodiment theimplantation energy. The implantation energy is chosen for example suchthat the penetration depth of the implanted dopant atoms proceeding fromthe rear side 102 is below 200 nm, particularly below 120 nm. Dopantatoms used are, in one embodiment, those dopant atoms which have lowenergy levels which have a separation of at least 100 MeV from theconduction band edge of the semiconductor material of the semiconductorbody. The semiconductor body 100 is composed of silicon, for example.Examples of n-type dopant atoms having low energy levels in comparisonwith silicon are selenium or sulfur. The use of such dopant atoms forrealizing the more highly doped second field stop zone section 24 hasthe effect that when the component is turned off, the additional dopingis almost completely available to prevent the punch-through of the spacecharge zone to the rear side 102 of the semiconductor body. When thecomponent is turned on, the additional doping is not fully active,however on account of the low energy levels, such that the more highlydoped second field stop zone section 24, when the component is turnedon, does not act—or acts only to a slight extent—as an additionalemitter, which would impair the dynamic properties of the component.

In a next method process, which is illustrated in FIG. 5B, the dopantatoms introduced previously are completely or at least partly removedagain. For this purpose, referring to FIG. 6B, a mask 60 is produced onthe rear side 102, which mask leaves free those regions in which thesecond emitter zone 22 and the more weakly doped first field stop zonesection 23 are intended to be produced. Using the mask, thesemiconductor body 100 is eroded proceeding from the rear side 102, tobe precise until the previously implanted dopant atoms have beencompletely or at least partly removed again in this region. In theexample illustrated in FIG. 5B, the previously introduced dopant atomsare completely removed.

Referring to FIG. 5C, with the mask 60 being retained, two implantationmethods are subsequently carried out: a first implantation method, byusing which dopant atoms of the second conduction type are introduced inthe region left free by the mask 60, the dopant atoms forming the latersecond emitter zone 22; and a second implantation method, by using whichdopant atoms of the first conduction type are introduced in the regionleft free by the mask 60, the dopant atoms forming the later first fieldstop zone section 23. In this case, the dopant atoms of the firstconduction type for the field top zone are implanted more deeply, thanthe dopant atoms of the second conduction type for the second emitterzone. The dopant atoms of the second implantation method are, forexample, customary n-type dopant atoms, such as e.g., selenium andphosphorus.

In a manner not illustrated in greater detail, the mask 60 issubsequently removed and a thermal method is carried out, by using whichthe implanted dopant atoms are firstly activated and secondly indiffusedinto the semiconductor body 100 which ultimately leads to the componentstructure illustrated in FIG. 1. FIG. 1 does not illustrate a “step” inthe region of the rear side which arises as a result of the partialerosion of the semiconductor body as explained with reference to FIG.5B.

As an alternative, in the method processes explained with reference toFIG. 5C, there is the possibility of carrying out the first implantationmethod for introducing the dopant atoms of the second emitter zone 22,if the mask 60 has been applied to the rear side 102, but of removingthe mask before carrying out the second implantation method. In thiscase, the dopant atoms of the first conduction type are also introducedinto the edge zone 112 and intensify the doping of the second field stopzone section 24 there. In this case, the dopant dose of the second fieldstop zone section 24 results from the implantation dose of theimplantation method explained with reference to FIG. 5A and theimplantation dose of the second implantation method explained withreference to FIG. 5C (after removal of the mask).

The basic principle explained, namely of providing an increased fieldstop doping in the region of the edge zone of a semiconductor body ofthe power semiconductor component in order to increase the avalanchestrength of the component, is not restricted to power IGBTs, but rathercan also be applied to power diodes, for example.

FIG. 6 illustrates one embodiment of such a power diode on the basis ofa vertical cross section through a semiconductor body 200 of the diode.This semiconductor body 200 has a first side 201, which is referred tohereinafter as front side, a second side 202, which is referred tohereinafter as rear side, and an edge 203. The semiconductor body 200has an edge zone 212, which adjoins the edge 203 in a lateral direction,and an inner zone 211 adjacent to the edge zone 212 in a lateraldirection. An edge termination 250 is present in the region of the frontside 201. The edge termination 250 can be realized in accordance withthe edge termination 50 explained above for the power IGBT, such that inthis regard reference is made to the explanations given above. Theexplanations given above for the edge zone 112 and the inner zone 111 ofthe power IGBT are correspondingly applicable to the edge zone 212 andthe inner zone 211.

The power diode illustrated is a vertical power diode and has a firstemitter zone 227, which is doped complementarily with respect to thebase zone 225 and which is adjacent to the front side 201 of thesemiconductor body 200. In a lateral direction of the semiconductor body200, the first emitter zone 227 ends in the inner zone 211 or in atransition region between the inner zone 211 and the edge zone 212 andthus at a distance from the edge 203. The first emitter zone 227 isp-doped, for example, and in this case forms an anode zone of the diode,with which contact is made by an anode electrode A (illustratedschematically). The base zone 225 is arranged between the first emitterzone 227 and a second emitter zone 222, wherein, in the exampleillustrated, the second emitter zone 222 is adjacent to the rear side202 of the semiconductor body 200 and contact is made with it there by aconnection electrode 242. The second emitter zone 222 is of the sameconduction type as the base zone 225, and thus doped complementarilywith respect to the first emitter zone 227. In the case of an n-dopedsecond emitter zone 222, the second connection electrode 242 is acathode electrode K of the power diode. The second emitter zone 222 endsin the inner zone 211 or in a transition region between the inner zone211 and the edge zone 212, and thus at a distance from the edge 203 in alateral direction.

A doping concentration of the base zone 225 lies for example within therange of 10¹² cm⁻³ to 10¹⁴ cm⁻³. The doping concentration of the secondemitter zone 222 is significantly higher than that of the base zone 225.The dopant dose of the second emitter zone 222 lies for example in theregion of 10¹⁵cm⁻² given a vertical dimension of between 1 μm and 30 μm,which is equivalent to a doping edge concentration of between 3.3·10¹⁷cm⁻³ and 1·10²⁰ cm⁻³. In this case, the “doping edge concentration” isthe doping at the edge of the doped region, that is to say where it ishighest.

In the edge zone 212, the power diode referring to FIG. 7 has a fieldstop zone 224, which is doped more highly than the base zone 225 butmore lightly than the second emitter zone 222. A dopant dose of thefield stop zone 224 lies for example within the range of between 2·10¹²cm⁻² and 10¹³ cm⁻², and in one embodiment between 3·10¹² cm⁻² and 6·10¹²cm⁻², given vertical dimensions approximately identical to the emitterzone 222. In one embodiment, the dopant dose can be so high than notonly a static but also a dynamic punch-through of the space charge zoneis prevented. In this case, the dose lies above the breakdown charge,which is approximately 1.5¹⁰ cm⁻² for silicon.

The power diode illustrated is turned off if the pn junction between thefirst emitter zone 227 and the base zone 225 is reverse-biased. Inaccordance with the second field stop zone section 24 explained abovefor the power IGBT, the field stop zone 224 of the power diode has theeffect that when an avalanche breakdown occurs, the space charge zonecannot punch through or at least cannot punch through at just very smallavalanche currents as far as the rear side 202. A high dynamicrobustness of this component is achieved by virtue of the fact that thesecond emitter zone 222 does not reach right into the edge zone 212 in alateral direction or ends actually before the edge 203 in a lateraldirection.

One embodiment of a method for producing the second emitter zone 222 andthe field stop zone 224 for the power diode explained with reference toFIG. 6 is explained below with reference to FIG. 7. This methodcorresponds to the method already explained with reference to FIGS. 6Ato 6C for producing a field stop zone having two differently doped fieldstop zone sections. Referring to FIG. 7A, this method involves firstlycarrying out a whole-area implantation of dopant atoms of the firstconduction type, which form the later field stop zone 224. In FIG. 7A,224′ designates a region of a semiconductor body 200 into which thedopant atoms are implanted.

Referring to FIG. 7B, a mask 60 is subsequently applied to the rear side202, which mask leaves free that region of the rear side 202 in whichthe second emitter zone 222 is produced later. The previously implanteddopant atoms can be partly removed after production of the mask (notillustrated). However, since these dopant atoms of the same conductiontype as the dopant atoms of the second emitter zone 222, these alreadyintroduced dopant atoms can also remain after production of the mask 60.

Referring to FIG. 7C, further dopant atoms of the first conduction typeare subsequently implanted using the mask 60, the dopant atoms formingthe later second emitter zone 222. In FIG. 7C, 222′ designates a regionof the semiconductor body into which these dopant atoms of the firstconduction type are implanted. In this case, the implantation dose ofthe implantation method for producing the field stop zone 224 asexplained with reference to FIG. 7A is lower than the implantation doseof the method explained with reference to FIG. 7C since a lower dopingis intended to be achieved for the field stop zone 224 and for theemitter zone. If the dopant atoms introduced into the first implantationmethod remain completely in the semiconductor body, then the doping ofthe emitter zone 222 is composed of the dopant atoms introduced by thetwo implantation methods.

In a manner not illustrated in greater detail there is also thepossibility of modifying the method in accordance with FIGS. 7A to 7Csuch that firstly the dopant atoms which form the second emitter zoneare implanted, wherein the mask in this case is produced in such a waythat it covers those sections of the rearside 202 in which the fieldstop zone is intended to be produced. In this case, the dopant atoms forproducing the field stop zone are implanted after removal of the mask,wherein in this case the dopant atoms are implanted over the whole areavia the rear side 202 at the semiconductor body. In this method, thefield stop zone 24 results from the second implantation method, whilethe second emitter zone in this method results from both implantationmethods.

In accordance with the explanations concerning the power IGBT, thedopant atoms of the field stop zone 24 are in one embodiment dopantatoms having low energy levels, such as e.g., selenium or sulfur.

Finally, it should be pointed out that method or circuit features thatwere explained only in association with one example can be combined withmethod or circuit features from other examples even if this was notexplicitly explained above. Thus, in particular features which arerepresented in one of the claims below can be combined with features ofany other claims.

Although specific embodiments have been illustrated and describedherein, it will be appreciated by those of ordinary skill in the artthat a variety of alternate and/or equivalent implementations may besubstituted for the specific embodiments shown and described withoutdeparting from the scope of the present invention. This application isintended to cover any adaptations or variations of the specificembodiments discussed herein. Therefore, it is intended that thisinvention be limited only by the claims and the equivalents thereof.

1. A method for producing a semiconductor component structure in asemiconductor body having a first and a second side, wherein the methodcomprises producing two differently doped semiconductor zones of thesame conduction type, comprising: carrying out a first implantation, inthe course of which dopant atoms of a first conduction type areimplanted into the semiconductor body via one of the sides over thewhole area; producing a mask on the one side, which partly leaves freethe one side; removing at least a portion of the implanted dopant atomsby eroding the semiconductor body proceeding from the one of the sidesin the region left free by the mask; removing the mask, wherein a secondimplantation is carried out before or after the mask has been removed,in the course of which implantation dopant atoms of the first conductiontype are implanted into the semiconductor body via the one of the sides.2. The method of claim 1, comprising: producing an emitter zone of thesecond conduction type; and carrying out a third implantation beforeremoving the mask; and, using the mask, implanting dopant atoms of thesecond conduction type into the semiconductor body via the one side. 3.The method of claim 1, comprising effecting removing at least a portionof the implanted dopant atoms of the first conduction type using theimplantation mask.
 4. The method of claim 1, wherein the dopant atomsintroduced by means of the second implantation are selenium atoms orsulfur atoms.
 5. A method for producing a semiconductor componentstructure in a semiconductor body having a first and a second side,comprising: producing two differently doped semiconductor zones of thesame conduction type; carrying out a first implantation, implantingdopant atoms of a first conduction type into the semiconductor body viaone of the sides over the whole area; producing a mask on the one side,partly leaving free the one side; carrying out a second implantation,implanting dopant atoms of the first conduction type into the regionleft free by the mask proceeding from the one of the sides.
 6. Themethod according to claim 5, wherein after producing the mask and beforecarrying out the second implantation method, the dopant atoms introducedby the first implantation method in the regions left free by the maskare partly or completely removed.
 7. A method comprising: carrying out afirst implantation, including implanting dopant atoms of a firstconduction type into a semiconductor body via a first side, producing amask on the first side, leaving a region of the first side free;removing at least a portion of the implanted dopant atoms by eroding thesemiconductor body proceeding from the region left free by the mask;removing the mask, wherein a second implantation is carried out beforeor after the mask has been removed, including implanting dopant atoms ofthe first conduction type are implanted into the semiconductor body viathe first side or a second side.
 8. The method of claim 7, comprising:producing an emitter zone of the second conduction type; and carryingout a third implantation before removing the mask; and, using the mask,implanting dopant atoms of the second conduction type into thesemiconductor body via the first side.
 9. The method of claim 8,comprising effecting removing at least a portion of the implanted dopantatoms of the first conduction type using the implantation mask.
 10. Themethod of claim 9, wherein the dopant atoms introduced by the secondimplantation are selenium atoms or sulfur atoms.